Shih, H.-J.; Lo, I.; Wang, Y.-C.; Tsai, C.-D.; Lin, Y.-C.; Lu, Y.-Y.; Huang, H.-C.
Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy. Crystals 2022, 12, 417.
https://doi.org/10.3390/cryst12030417
AMA Style
Shih H-J, Lo I, Wang Y-C, Tsai C-D, Lin Y-C, Lu Y-Y, Huang H-C.
Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy. Crystals. 2022; 12(3):417.
https://doi.org/10.3390/cryst12030417
Chicago/Turabian Style
Shih, Huei-Jyun, Ikai Lo, Ying-Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin, Yi-Ying Lu, and Hui-Chun Huang.
2022. "Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy" Crystals 12, no. 3: 417.
https://doi.org/10.3390/cryst12030417
APA Style
Shih, H.-J., Lo, I., Wang, Y.-C., Tsai, C.-D., Lin, Y.-C., Lu, Y.-Y., & Huang, H.-C.
(2022). Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy. Crystals, 12(3), 417.
https://doi.org/10.3390/cryst12030417