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Journal: Crystals, 2020
Volume: 10
Number: 141
141
Article: Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process
Authors: by Haixiao Hu, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao, Yongzhong Wu and Xiaopeng Hao
Link: https://www.mdpi.com/2073-4352/10/2/141

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