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Journal: CrystalsVolume: 10Number: 141
Article: Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process
- Authors:
- Haixiao Hu1,
- Baoguo Zhang1 and
- Lei Liu1
- et al.
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