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Journal: Crystals, 2020
Volume: 10
Number: 1059

Article: TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Authors: by Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou and Wenbing Fan
Link: https://www.mdpi.com/2073-4352/10/11/1059

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