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Journal: Crystals, 2020
Volume: 10
Number: 1059
Article:
TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Authors:
by
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou and Wenbing Fan
Link:
https://www.mdpi.com/2073-4352/10/11/1059
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