Zhu, Z.;                     Yang, Z.;                     Zhang, Y.;                     Fan, X.;                     Liou, J.J.;                     Fan, W.    
        TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs. Crystals 2020, 10, 1059.
    https://doi.org/10.3390/cryst10111059
    AMA Style
    
                                Zhu Z,                                 Yang Z,                                 Zhang Y,                                 Fan X,                                 Liou JJ,                                 Fan W.        
                TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs. Crystals. 2020; 10(11):1059.
        https://doi.org/10.3390/cryst10111059
    
    Chicago/Turabian Style
    
                                Zhu, Zhihua,                                 Zhaonian Yang,                                 Yingtao Zhang,                                 Xiaomei Fan,                                 Juin Jei Liou,                                 and Wenbing Fan.        
                2020. "TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs" Crystals 10, no. 11: 1059.
        https://doi.org/10.3390/cryst10111059
    
    APA Style
    
                                Zhu, Z.,                                 Yang, Z.,                                 Zhang, Y.,                                 Fan, X.,                                 Liou, J. J.,                                 & Fan, W.        
        
        (2020). TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs. Crystals, 10(11), 1059.
        https://doi.org/10.3390/cryst10111059