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Micromachines 2018, 9(11), 579;

High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

Department of Electronics Engineering, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
Author to whom correspondence should be addressed.
Received: 28 September 2018 / Revised: 23 October 2018 / Accepted: 1 November 2018 / Published: 7 November 2018
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
PDF [10488 KB, uploaded 7 November 2018]


In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. View Full-Text
Keywords: MEMS relays; MEMS switches; mechanical relays; CMOS-MEMS; MEMS MEMS relays; MEMS switches; mechanical relays; CMOS-MEMS; MEMS

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Riverola, M.; Torres, F.; Uranga, A.; Barniol, N. High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer. Micromachines 2018, 9, 579.

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