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Open AccessArticle

A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer

1
Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, China
2
MEMS Center, Harbin Institute of Technology, Harbin 150001, China
*
Author to whom correspondence should be addressed.
Micromachines 2018, 9(12), 675; https://doi.org/10.3390/mi9120675
Received: 11 November 2018 / Revised: 3 December 2018 / Accepted: 18 December 2018 / Published: 19 December 2018
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
Micro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the application of a vacuum-packaged sensitive element. The quantization noise in the baseband of the interface circuit is greatly suppressed by a 4th-order loop shaping. The digital output is attained by the interface circuit based on a low-noise front-end charge-amplifier and a 4th-order Sigma-Delta (ΣΔ) modulator. The stability of high-order ΣΔ was studied by the root locus method. The gain of the integrators was reduced by using the proportional scaling technique. The low-noise front-end detection circuit was proposed with the correlated double sampling (CDS) technique to eliminate the 1/f noise and offset. The digital interface circuit was implemented by 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. The high-performance digital accelerometer system was implemented by double chip integration and the active interface circuit area was about 3.3 mm × 3.5 mm. The high-Q MEMS accelerometer system consumed 10 mW from a single 5 V supply at a sampling frequency of 250 kHz. The micro-accelerometer system could achieve a third harmonic distortion of −98 dB and an average noise floor in low-frequency range of less than −140 dBV; a resolution of 0.48 μg/Hz1/2 (@300 Hz); a bias stability of 18 μg by the Allen variance program in MATLAB. View Full-Text
Keywords: MEMS; interface circuit; high-Q capacitive accelerometer; Sigma-Delta MEMS; interface circuit; high-Q capacitive accelerometer; Sigma-Delta
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MDPI and ACS Style

Li, X.; Hu, J.; Liu, X. A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer. Micromachines 2018, 9, 675. https://doi.org/10.3390/mi9120675

AMA Style

Li X, Hu J, Liu X. A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer. Micromachines. 2018; 9(12):675. https://doi.org/10.3390/mi9120675

Chicago/Turabian Style

Li, Xiangyu; Hu, Jianping; Liu, Xiaowei. 2018. "A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer" Micromachines 9, no. 12: 675. https://doi.org/10.3390/mi9120675

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