Search Results (184)

Microelectromechanical system (MEMS) devices are specialized electronic devices that integrate the benefits of both mechanical and electrical structures. However, the contact behavior between the interfaces of these structures can significantly impact the performance of MEMS devices, particularly when the surface roughness approaches the characteristic size of the devices. In such cases, the contact between the interfaces is not a perfect face-to-face interaction but occurs through point-to-point contact. As a result, the contact area changes with varying contact pressures and surface roughness, influencing the thermal and electrical performance. By integrating the CMY model with finite element simulations, we systematically explored the thermal conductance regulation mechanism of MEMS contact switches. We analyzed the effects of the contact pressure, micro-hardness, surface roughness, and other parameters on thermal conductance, providing essential theoretical support for enhancing reliability and optimizing thermal management in MEMS contact switches. We examined the thermal contact, gap, and joint conductance of an MEMS switch under different contact pressures, micro-hardness values, and surface roughness levels using the CMY model. Our findings show that both the thermal contact and gap conductance increase with higher contact pressure. For a fixed contact pressure, the thermal contact conductance decreases with rising micro-hardness and root mean square (RMS) surface roughness but increases with a higher mean asperity slope. Notably, the thermal gap conductance is considerably lower than the thermal contact conductance. Full article

This article aims to utilize a microelectromechanical system (MEMS) to modulate coupling behavior of silicon nitride (Si₃N₄) waveguides to perform an optical switch based on a directional coupling (DC) mechanism. There are two states of the switch. First state, a Si₃N₄ wire is initially positioned up suspended in the air. In the second state, this wire will be moved down to be placed between two arms of the DC waveguides, changing the coupling behavior to achieve bar and cross states of the optical switch function. In the future, the MEMS will be used to move this wire down. In this work, we present simulations of the two static states to optimize the DC structure parameters. Based on the simulated results, the device size is 8.8 μm × 55 μm. The insertion loss is calculated to be approximately 0.24 dB and 0.33 dB, the extinction ratio is approximately 24.70 dB and 25.46 dB, and the crosstalk is approximately −24.60 dB and −25.56 dB, respectively. In the C band of optical communication, the insertion loss ranges from 0.18 dB to 0.47 dB. As such, this device will exhibit excellent optical switch performance and provide advantages in many integrated optics-related optical systems applications. Furthermore, it can be used in optical communications, data centers, LiDAR, and so on, enhancing important reference value for such applications. Full article

Processing errors can result in an asymmetric stiffness distribution within a microelectromechanical system (MEMS) disk resonator gyroscope (DRG) and thereby cause a mode mismatch and reduce the mechanical sensitivity and closed-loop scale factor stability. This paper proposes an automatic mode-matching method that utilizes mode reversal to obtain the true resonant frequency of the operating state of a gyroscope for high-precision matching. This method constructs a gyroscope control system that contains a drive closed loop, sense force-to-rebalance (FTR) closed loop, and quadrature error correction closed loop. After the gyroscope was powered on and started up, the x- and y-axes were quickly switched to obtain the resonant frequencies of the two axes through a phase-locked loop (PLL), and the x-axis tuning voltage was automatically adjusted to match the two-axis frequency. The experimental results show that the method takes only 5 s to execute, the frequency matching accuracy reaches 0.01 Hz, the matching state can be maintained in the temperature range of −20 to 60 °C, and the fluctuation of the frequency split does not exceed 0.005 Hz. Full article

In the rapidly advancing digital era, the demand for miniaturized and high-performance electronic devices is increasing, particularly in applications such as wireless communication, unmanned aerial vehicles, and healthcare devices. Radio-frequency microelectromechanical systems (RF MEMS), particularly RF MEMS switches, play a crucial role in enhancing RF performance by providing low-loss, high-isolation switching and precise signal path control in reconfigurable RF front-end systems. Among different configurations, electrothermally actuated bistable lateral RF MEMS switches are preferred for their energy efficiency, requiring power only during transitions. This paper presents a novel approach to improve the RF performance of such a switch through structural modifications and machine learning (ML)-driven optimization. To enable efficient high-frequency operation, the H-clamp structure was re-engineered into various lateral configurations, among which the I-clamp exhibited superior RF characteristics. The proposed I-clamp switch was optimized using an eXtreme Gradient Boost (XGBoost) ML model to predict optimal design parameters while significantly reducing the computational overhead of conventional EM simulations. Activation functions were employed within the ML model to improve the accuracy of predicting optimal design parameters by capturing complex nonlinear relationships. The proposed methodology reduced design time by 87.7%, with the optimized I-clamp switch achieving −0.8 dB insertion loss and −70 dB isolation at 10 GHz. Full article

This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered for single and dual-band applications. An SPDT (single-pole-double-thru) switch composed of double-clamped ohmic microswitches has been introduced to connect triangular resonators with Sierpinski geometry, symmetrically placed with respect to a microstrip line to obtain a dual notch response. Close frequencies or spans as wide as 2 GHz can be obtained depending on the internal complexity and the edge side. The internal complexity has been modified to introduce the possibility of using the same edge size for the frequency tuning of an elementary cell, maintaining a fixed footprint, and allowing coupled structures to implement high-frequency filters of the same size and variable operational frequencies. Preliminary experimental results have been obtained as a confirmation of the predicted device functionality. Full article

MEMS stiffness-tunable devices, owing to their low resonant frequency and high sensitivity, have been widely adopted in fields such as biological force sensing, vibration sensing, and inertial sensing. However, traditional stress-effect-based stiffness-adjustment methods offer limited tuning range. This paper introduces a novel stiffness-tuning mechanism based on the principle of stiffness compensation, integrating positive stiffness springs with V-shaped negative stiffness springs in a parallel configuration. A self-locking mechanism enables precise control of the mechanical preloading on the negative stiffness structures to realize stiffness adjustment. This design is prototyped by microscale fabrication techniques and is suitable for miniaturization. The experimental results confirm a stiffness reduction of over 90% and demonstrate bistability. These findings highlight the potential of the design for high-sensitivity MEMS accelerometers and dual-mode optical switches with low switching voltage. Full article

Radio Frequency Micro Electro Mechanical Systems (RF MEMS) are devices showing exceptional potential to satisfy the demands of emerging RF electronic technologies, including those considered for high-power applications, such as for long distance communication systems. Operation in this regime requires an alternative way of thinking for these devices and, for example, a more accurate control of the pull-in voltage is of major importance due to the self-actuation effect. Therefore, the studies focusing on the features of the moving bridges are of great importance. This work presents the fabrication of a full family of RF MEMS switches suitable for high-power implementations having bridges deposited by Au electroplating and released using purely standard wet processes, as well as a carefully designed experimental study of their pull-in voltage. Depositing the bridge of the high-power RF MEMS by using only a single electroplating step makes the device fabrication easier, whilst the utilization of a purely wet release process is an asset. This method relies on low temperature processes, applicable simultaneously in bridges with various geometrical and perforation details without the need of any specialised infrastructure. The experimentally obtained results suggest that for this technology the bridge thickness is a critical factor for controlling the pull-in characteristics between devices fabricated in the same run. Moreover, it is revealed that for thicker bridges, geometry and hole perforation effects are more pronounced. This technology is therefore suitable for developing RF MEMS where the bridge thickness could be potentially utilized for enabling optimization engineering between devices that should be fabricated in the same run but need to satisfy diverse specifications during their operation. Full article

This paper reviews and compares electrostatically actuated MEMS (micro-electro-mechanical system) arrays for light modulation and light steering in which transmission through the substrate is required. A comprehensive comparison of the technical achievements of micromirror arrays and microshutter arrays is provided. The main focus of this paper is MEMS micromirror arrays for smart glass in building windows and façades. This technology utilizes millions of miniaturized and actuatable micromirrors on transparent substrates, enabling use with transmissive substrates such as smart windows for personalized daylight steering, energy saving, and heat management in buildings. For the first time, subfield-addressable MEMS micromirror arrays with an area of nearly 1 m² are presented. The recent advancements in MEMS smart glass technology for daylight steering are discussed, focusing on aspects like the switching speed, scalability, transmission, lifetime study, and reliability of micromirror arrays. Finally, simulations demonstrating the potential yearly energy savings for investments in MEMS smart glazing are presented, including a comparison to traditional automated external blind systems in a model office room with definite user interactions throughout the year. Additionally, this platform technology with planarized MEMS elements can be used for laser safety goggles to shield pilots, tram, and bus drivers as well as security personal from laser threats, and is also presented in this paper. Full article

High-precision, low-power MEMS accelerometers are extensively utilized across civilian applications. Closed-loop accelerometers employing switched-capacitor (SC) circuit topologies offer notable advantages, including low power consumption, high signal-to-noise ratio (SNR), and excellent linearity. Addressing the critical demand for high-precision, low-power MEMS accelerometers in modern geophones, this work focuses on the design and implementation of closed-loop interface ASICs (Application-Specific Integrated Circuits). The proposed interface circuit, based on switched-capacitor modulation technology, incorporates a low-noise charge amplifier, sample-and-hold circuit, integrator, and clock divider circuit. To minimize average power consumption, a switched operational amplifier (op-amp) technique is adopted, which temporarily disconnects idle op-amps from the power supply. Additionally, a class-AB output stage is employed to enhance the dynamic range of the circuit. The design was realized using a standard 0.35 μm CMOS process, culminating in the completion of layout design and small-scale engineering fabrication. The performance of the MEMS accelerometers was evaluated under a 3.3 V power supply, achieving a power consumption of 3.3 mW, an accelerometer noise density below 1 μg/√Hz, a sensitivity of 1.65 V/g, a measurement range of ±1 g, a nonlinearity of 0.15%, a bandwidth of 300 Hz, and a bias stability of approximately 36 μg. These results demonstrate the efficacy of the proposed design in meeting the stringent requirements of high-precision MEMS accelerometer applications. Full article

This paper constructs a numerical simulation model for the deformation of droplets in a variable cross-section groove of a liquid droplet MEMS switch under different directions, amplitudes, frequencies, and waveforms of acceleration. The numerical simulation utilizes the level set method to monitor the deformation surface boundary of the metal droplets. The simulation outcomes manifest that when the negative impact acceleration on the X-axis is 12.9 m/s², the negative impact acceleration on the Y-axis is 90 m/s², the negative impact acceleration on the Z-axis is 34.5 m/s², and the metal droplet interfaces with the metal electrode. The droplet deformation under the effect of a sine wave acceleration signal in the X and Y directions is lower than that under impact acceleration, while in the Z direction, the deformation is higher than that under impact acceleration. The deformation of metal droplets under square wave acceleration is more pronounced than that under sinusoidal wave acceleration. The deformation escalates with the augmentation in square wave amplitude and dwindles with the reduction in square wave acceleration frequency. Furthermore, there exists a phase difference between the deformation curve of the metal droplet and the continuous acceleration signal curve, and the phase difference is dependent of the material properties of the metal droplet. This work elucidates the deformation of the liquid-metal droplets under continuous acceleration and furnishes the foundation for the continuous operation design of MEMS droplet switches. Full article

A geometrical reconfigurable structure based on RF Micro-electro-mechanical switches (RF-MEMS) is proposed in this work. The structure is composed of an array of gold metallic patches interconnected together utilizing RF-MEMS switches in order to change its geometry and, consequently, the scattering parameters. In particular, the reconfigurability is achieved by activating multiple RF-MEMS switches, which enables the change in electrical length and, consequently, the resonance frequency of the structure. As a proof of concept, an experimental antenna prototype composed of an array of $7\times 7$ elements interconnected by a set of RF-MEMS switches has been designed, fabricated numerically, and experimentally assessed. The structure can be set as an antenna or as other basic radio frequency components. The obtained experimental results are in good agreement with the simulations, with an error of less than $5\%$ for the considered radiating structures. The quite promising results demonstrate the potential and flexibility of the proposed structure. Full article

Electrothermal actuators are highly advantageous for microelectromechanical systems (MEMS) due to their capability to generate significant force and large displacements. Despite these benefits, their application in reconfigurable conduction line switches is limited, particularly when employing commercial processes. In DC MEMS switches, electrothermal actuators require electrical insulation between the biasing voltage and the transmission line to prevent interference and maintain the integrity of the switch. This work presents a chevron-type electrothermal actuator utilizing a stack of $\mathrm{S}\mathrm{i}{\mathrm{O}}_2/$ Al thin films on a silicon (Si) structural layer beam to create a DC MEMS switch. The design leverages a thin film Al heater to drive the actuator while the $\mathrm{S}\mathrm{i}{\mathrm{O}}_2$ layer provides electrical insulation, suppressing crosstalk with the Si layer. The electrical contact resistance of a Si-to-Si interface was evaluated by applying a controlled current and measuring the resultant voltage. A low contact resistance of 150 Ω was achieved when an initial contact gap of 2.52 μm was closed using an actuator with an actuation voltage of 1.2 V and a current of 205 mA, with a switching speed of less than 5 ms. Factors such as the contact force, the temperature, and the residual device layer etching angle significantly impact the Si-to-Si contact resistance and the switch’s longevity. The switch withstands a breakdown voltage up to 350 V at its terminal contacts. Thus, it will be robust to self-actuation caused by unwanted voltage contributions, making it suitable for high-voltage and harsh environment applications. Full article

As the core component of energy transfer in weapon system, safety and arming (S&A) devices affect the safety, reliability, and damage ability of the weapon. Micro-electromechanical systems (MEMS) S&A devices have been widely investigated for their smaller structure size, higher functional integration, and better smart functionality. This paper proposes the design of a multi-physics field-driven MEMS S&A device. The S&A mechanism is composed of a setback mechanism, a spin mechanism, and an electrothermal mechanism, achieving multiphysics-arming. With the coordination of the three mechanisms, the S&A device can produce a 1 mm displacement. The displacement generated allows the S&A device to switch between safety status and arming status. The unlock conditions and overload resistance of each mechanism are obtained by finite element simulation. Based on SOI wafers and silicon oxide wafers, the chips were fabricated and packaged. Several tests were carried out to verify the working condition and overload resistance of the S&A device. The result shows that under a voltage of 11 V and a rotation speed of 8000 r/min, with a size no more than 10 mm $\times$ 10 mm $\times$ 1.5 mm, the device works smoothly and can withstand an overload of 25,000 g. Full article

This paper presents a three-channel reconfigurable step attenuator based on radio frequency (RF) microelectromechanical system (MEMS) switches, in response to the current issues of high insertion loss and low attenuation accuracy of attenuators. The coplanar waveguide (CPW), cross-shaped power dividers, RF MEMS switches, and π-type attenuation resistor networks are designed as a basic unit of the attenuator. The attenuator implemented attenuation of 0~30 dB at 5 dB intervals in the frequency range of 1~25 GHz through two basic units. The results show that the insertion loss is less than 1.41 dB, the attenuation accuracy is better than 2.48 dB, and the geometric size is 2.4 mm × 4.0 mm × 0.7 mm. The attenuator can be applied to numerous fields such as radar, satellites, aerospace, electronic communication, and so on. Full article

Due to its excellent electrical performance, mechanical reliability, and thermal stability, electroplated gold is still the most commonly used material for movable beams in RF MEMS switches. This paper investigates the influence of process conditions on the quality and growth rate of gold electroplating, and the optimized process parameters for the gold electroplating process are obtained. The characterization of the optimized electroplated gold layer shows that it has small surface roughness and excellent thermal stability. With this optimized gold electroplating process, the RF MEMS switches are fabricated and hermetic packaged. In order to obtain the temperature environment adaptability of the packaged switch, the influence of working temperature is studied. The temperature effects on mechanical performance (includes pull-in voltage and lifetime) and RF performance (includes insertion loss and isolation) are revealed. Full article