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Open AccessArticle

A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip

Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
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Micromachines 2018, 9(11), 559; https://doi.org/10.3390/mi9110559
Received: 13 August 2018 / Revised: 15 September 2018 / Accepted: 18 September 2018 / Published: 29 October 2018
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
Self-sustained feedback oscillators referenced to MEMS/NEMS resonators have the potential for a wide range of applications in timing and sensing systems. In this paper, we describe a real-time temperature compensation approach to improving the long-term stability of such MEMS-referenced oscillators. This approach is implemented on a ~26.8 kHz self-sustained MEMS oscillator that integrates the fundamental in-plane mode resonance of a single-crystal silicon-on-insulator (SOI) resonator with a programmable and reconfigurable single-chip CMOS sustaining amplifier. Temperature compensation using a linear equation fit and look-up table (LUT) is used to obtain the near-zero closed-loop temperature coefficient of frequency (TCf) at around room temperature (~25 °C). When subject to small temperature fluctuations in an indoor environment, the temperature-compensated oscillator shows a >2-fold improvement in Allan deviation over the uncompensated counterpart on relatively long time scales (averaging time τ > 10,000 s), as well as overall enhanced stability throughout the averaging time range from τ = 1 to 20,000 s. The proposed temperature compensation algorithm has low computational complexity and memory requirement, making it suitable for implementation on energy-constrained platforms such as Internet of Things (IoT) sensor nodes. View Full-Text
Keywords: oscillator; resonator; micro/nanoelectromechanical systems (MEMS/NEMS); application-specific integrated circuit (ASIC); MEMS-ASIC integration; programmable sustaining amplifier; single-crystal silicon (SC-Si); silicon-on-insulator (SOI); real-time temperature compensation loop oscillator; resonator; micro/nanoelectromechanical systems (MEMS/NEMS); application-specific integrated circuit (ASIC); MEMS-ASIC integration; programmable sustaining amplifier; single-crystal silicon (SC-Si); silicon-on-insulator (SOI); real-time temperature compensation loop
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MDPI and ACS Style

Islam, M.S.; Wei, R.; Lee, J.; Xie, Y.; Mandal, S.; Feng, P.X.-L. A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip. Micromachines 2018, 9, 559. https://doi.org/10.3390/mi9110559

AMA Style

Islam MS, Wei R, Lee J, Xie Y, Mandal S, Feng PX-L. A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip. Micromachines. 2018; 9(11):559. https://doi.org/10.3390/mi9110559

Chicago/Turabian Style

Islam, Mohammad S.; Wei, Ran; Lee, Jaesung; Xie, Yong; Mandal, Soumyajit; Feng, Philip X.-L. 2018. "A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip" Micromachines 9, no. 11: 559. https://doi.org/10.3390/mi9110559

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