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Chen R, Wang L, Han R, Liao K, Shi X, Zhang P, Hu H. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines. 2025; 16(4):375. https://doi.org/10.3390/mi16040375

Chen, Rui, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, and Huiyong Hu. 2025. "A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors" Micromachines 16, no. 4: 375. https://doi.org/10.3390/mi16040375

Chen, R., Wang, L., Han, R., Liao, K., Shi, X., Zhang, P., & Hu, H. (2025). A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines, 16(4), 375. https://doi.org/10.3390/mi16040375