Chen, R.; Wang, L.; Han, R.; Liao, K.; Shi, X.; Zhang, P.; Hu, H.
A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines 2025, 16, 375.
https://doi.org/10.3390/mi16040375
AMA Style
Chen R, Wang L, Han R, Liao K, Shi X, Zhang P, Hu H.
A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines. 2025; 16(4):375.
https://doi.org/10.3390/mi16040375
Chicago/Turabian Style
Chen, Rui, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, and Huiyong Hu.
2025. "A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors" Micromachines 16, no. 4: 375.
https://doi.org/10.3390/mi16040375
APA Style
Chen, R., Wang, L., Han, R., Liao, K., Shi, X., Zhang, P., & Hu, H.
(2025). A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. Micromachines, 16(4), 375.
https://doi.org/10.3390/mi16040375
