Zhang, X.; Cao, Y.; Chen, C.; Wu, L.; Wang, Z.; Su, S.; Zhang, W.; Lv, L.; Zheng, X.; Tian, W.;
et al. Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. Micromachines 2024, 15, 950.
https://doi.org/10.3390/mi15080950
AMA Style
Zhang X, Cao Y, Chen C, Wu L, Wang Z, Su S, Zhang W, Lv L, Zheng X, Tian W,
et al. Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. Micromachines. 2024; 15(8):950.
https://doi.org/10.3390/mi15080950
Chicago/Turabian Style
Zhang, Xinxiang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian,
and et al. 2024. "Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions" Micromachines 15, no. 8: 950.
https://doi.org/10.3390/mi15080950
APA Style
Zhang, X., Cao, Y., Chen, C., Wu, L., Wang, Z., Su, S., Zhang, W., Lv, L., Zheng, X., Tian, W., Ma, X., & Hao, Y.
(2024). Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions. Micromachines, 15(8), 950.
https://doi.org/10.3390/mi15080950
