Article Versions Notes

Thesberg M, Schanovsky F, Zhao Y, Karner M, Gonzalez-Medina JM, Stanojević Z, Chasin A, Rzepa G. A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence. Micromachines. 2024; 15(7):829. https://doi.org/10.3390/mi15070829

Thesberg, Mischa, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, and Gerhard Rzepa. 2024. "A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence" Micromachines 15, no. 7: 829. https://doi.org/10.3390/mi15070829

Thesberg, M., Schanovsky, F., Zhao, Y., Karner, M., Gonzalez-Medina, J. M., Stanojević, Z., Chasin, A., & Rzepa, G. (2024). A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence. Micromachines, 15(7), 829. https://doi.org/10.3390/mi15070829