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Journal: Micromachines, 2024
Volume: 15
Number: 1455
1455
Article: Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel
Authors: by Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel and Arun Thirumurugan
Link: https://www.mdpi.com/2072-666X/15/12/1455

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