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Journal: MicromachinesVolume: 15Number: 1455
Article: Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel
  • Authors:
  • Potaraju Yugender1,
  • Rudra Sankar Dhar1,* and
  • Swagat Nanda1
  • et al.
Link: https://www.mdpi.com/2072-666X/15/12/1455

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