Zhang, M.; Chen, Y.; Guo, S.; Lu, H.; Zhu, Q.; Mi, M.; Wu, M.; Hou, B.; Yang, L.; Ma, X.;
et al. Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. Micromachines 2023, 14, 1513.
https://doi.org/10.3390/mi14081513
AMA Style
Zhang M, Chen Y, Guo S, Lu H, Zhu Q, Mi M, Wu M, Hou B, Yang L, Ma X,
et al. Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. Micromachines. 2023; 14(8):1513.
https://doi.org/10.3390/mi14081513
Chicago/Turabian Style
Zhang, Meng, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma,
and et al. 2023. "Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications" Micromachines 14, no. 8: 1513.
https://doi.org/10.3390/mi14081513
APA Style
Zhang, M., Chen, Y., Guo, S., Lu, H., Zhu, Q., Mi, M., Wu, M., Hou, B., Yang, L., Ma, X., & Hao, Y.
(2023). Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. Micromachines, 14(8), 1513.
https://doi.org/10.3390/mi14081513