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Journal: Micromachines, 2023
Volume: 14
Number: 931

Article: Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Authors: by Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz and Edward-Yi Chang
Link: https://www.mdpi.com/2072-666X/14/5/931

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