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Journal: Micromachines, 2023
Volume: 14
Number: 931
Article:
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Authors:
by
Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz and Edward-Yi Chang
Link:
https://www.mdpi.com/2072-666X/14/5/931
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