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Journal: MicromachinesVolume: 14Number: 1042
Article: Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
  • Authors:
  • Xiangdong Li1,2,*,
  • Meng Wang1 and
  • Jincheng Zhang1,2,*
  • et al.
Link: https://www.mdpi.com/2072-666X/14/5/1042

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