Article Versions Notes

Li X, Wang M, Zhang J, Gao R, Wang H, Yang W, Yuan J, You S, Chang J, Liu Z, et al. Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. Micromachines. 2023; 14(5):1042. https://doi.org/10.3390/mi14051042

Li, Xiangdong, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, and et al. 2023. "Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization" Micromachines 14, no. 5: 1042. https://doi.org/10.3390/mi14051042

Li, X., Wang, M., Zhang, J., Gao, R., Wang, H., Yang, W., Yuan, J., You, S., Chang, J., Liu, Z., & Hao, Y. (2023). Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. Micromachines, 14(5), 1042. https://doi.org/10.3390/mi14051042