Yoo, J.-H.; Lee, I.-G.; Tsutsumi, T.; Sugiyama, H.; Matsuzaki, H.; Lee, J.-H.; Kim, D.-H.
Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors. Micromachines 2023, 14, 439.
https://doi.org/10.3390/mi14020439
AMA Style
Yoo J-H, Lee I-G, Tsutsumi T, Sugiyama H, Matsuzaki H, Lee J-H, Kim D-H.
Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors. Micromachines. 2023; 14(2):439.
https://doi.org/10.3390/mi14020439
Chicago/Turabian Style
Yoo, Ji-Hoon, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, and Dae-Hyun Kim.
2023. "Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors" Micromachines 14, no. 2: 439.
https://doi.org/10.3390/mi14020439
APA Style
Yoo, J.-H., Lee, I.-G., Tsutsumi, T., Sugiyama, H., Matsuzaki, H., Lee, J.-H., & Kim, D.-H.
(2023). Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors. Micromachines, 14(2), 439.
https://doi.org/10.3390/mi14020439
