Priya, G.L.; Rawat, N.; Sanagavarapu, A.; Venkatesh, M.; Andrew Roobert, A.
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell. Micromachines 2023, 14, 232.
https://doi.org/10.3390/mi14020232
AMA Style
Priya GL, Rawat N, Sanagavarapu A, Venkatesh M, Andrew Roobert A.
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell. Micromachines. 2023; 14(2):232.
https://doi.org/10.3390/mi14020232
Chicago/Turabian Style
Priya, G. Lakshmi, Namita Rawat, Abhishek Sanagavarapu, M. Venkatesh, and A. Andrew Roobert.
2023. "Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell" Micromachines 14, no. 2: 232.
https://doi.org/10.3390/mi14020232
APA Style
Priya, G. L., Rawat, N., Sanagavarapu, A., Venkatesh, M., & Andrew Roobert, A.
(2023). Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell. Micromachines, 14(2), 232.
https://doi.org/10.3390/mi14020232