Order Article Reprints

Oh SI, Im IH, Yoo C, Ryu SY, Kim Y, Choi S, Eom T, Hwang CS, Choi BJ. Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory. Micromachines. 2019; 10(5):281. https://doi.org/10.3390/mi10050281

Oh, Seung Ik, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang, and Byung Joon Choi. 2019. "Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory" Micromachines 10, no. 5: 281. https://doi.org/10.3390/mi10050281

Oh, S. I., Im, I. H., Yoo, C., Ryu, S. Y., Kim, Y., Choi, S., Eom, T., Hwang, C. S., & Choi, B. J. (2019). Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory. Micromachines, 10(5), 281. https://doi.org/10.3390/mi10050281