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Open AccessArticle

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

Key Laboratory for Wide-Bandgap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China
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Micromachines 2019, 10(6), 424; https://doi.org/10.3390/mi10060424
Received: 10 June 2019 / Revised: 20 June 2019 / Accepted: 24 June 2019 / Published: 24 June 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits. View Full-Text
Keywords: DLTFET; on-state current; subthreshold swing; frequency characteristics DLTFET; on-state current; subthreshold swing; frequency characteristics
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Han, T.; Liu, H.; Chen, S.; Wang, S.; Li, W. Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction. Micromachines 2019, 10, 424.

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