Next Article in Journal
Hydrodynamic Microparticle Separation Mechanism Using Three-Dimensional Flow Profiles in Dual-Depth and Asymmetric Lattice-Shaped Microchannel Networks
Next Article in Special Issue
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET
Previous Article in Journal
DEP-on-a-Chip: Dielectrophoresis Applied to Microfluidic Platforms
Previous Article in Special Issue
A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors
Open AccessArticle

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

Key Laboratory for Wide-Bandgap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(6), 424;
Received: 10 June 2019 / Revised: 20 June 2019 / Accepted: 24 June 2019 / Published: 24 June 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits. View Full-Text
Keywords: DLTFET; on-state current; subthreshold swing; frequency characteristics DLTFET; on-state current; subthreshold swing; frequency characteristics
Show Figures

Figure 1

MDPI and ACS Style

Han, T.; Liu, H.; Chen, S.; Wang, S.; Li, W. Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction. Micromachines 2019, 10, 424.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Search more from Scilit
Back to TopTop