Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction
Abstract
:1. Introduction
2. Device Structure and Models
3. Discussion of Simulation Results
3.1. The Input Characteristics
3.2. The Output Characteristics
3.3. The Operating Mechanism of H-DLTFET
3.4. Effect of the Device Parameters on the Performance of H-DLTFET
3.5. The C-V Characteristics
3.6. The Frequency Characteristics
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Han, T.; Liu, H.; Chen, S.; Wang, S.; Li, W. Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction. Micromachines 2019, 10, 424. https://doi.org/10.3390/mi10060424
Han T, Liu H, Chen S, Wang S, Li W. Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction. Micromachines. 2019; 10(6):424. https://doi.org/10.3390/mi10060424
Chicago/Turabian StyleHan, Tao, Hongxia Liu, Shupeng Chen, Shulong Wang, and Wei Li. 2019. "Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction" Micromachines 10, no. 6: 424. https://doi.org/10.3390/mi10060424