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Open AccessArticle

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

by Huan Li 1, Jue Wang 1,*, Na Ren 2, Hongyi Xu 2 and Kuang Sheng 2
School of Information & Electrical Engineering, Zhejiang University City College, Hangzhou 310015, China
College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China
Author to whom correspondence should be addressed.
Micromachines 2019, 10(7), 485;
Received: 10 May 2019 / Revised: 11 July 2019 / Accepted: 12 July 2019 / Published: 18 July 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experimental results show that the maximum surge currents that the devices can withstand are similar for both cases. It is found that short circuits occurred between the gate and the source in the failed devices. The characteristics of the body diode have also changed after the tests. By measuring the device characteristics after each surge current is applied, it can be concluded that the damages to the gate oxide layer and the body diode occurred only when the maximum surge current is applied. By decapping the failed devices and observing the cross section of the damaged cell, it is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure. Finally, the TCAD simulation of the devices has been carried out to bring insight into the operation of the devices during the surge events. View Full-Text
Keywords: 1200 V SiC MOSFET; body diode; surge reliability; silvaco simulation 1200 V SiC MOSFET; body diode; surge reliability; silvaco simulation
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Li, H.; Wang, J.; Ren, N.; Xu, H.; Sheng, K. Investigation of 1200 V SiC MOSFETs’ Surge Reliability. Micromachines 2019, 10, 485.

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