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Open AccessArticle

Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD

1
Graduate School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Korea
2
School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(10), 689; https://doi.org/10.3390/mi10100689
Received: 6 September 2019 / Revised: 6 October 2019 / Accepted: 10 October 2019 / Published: 12 October 2019
(This article belongs to the Special Issue NANO KOREA 2019)
Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD). We were able to achieve the high phosphorus (CVD gap-fill in a large electrical contact area which does is affected by line pitch size) doping concentration (>2.5 × 1021 cm−3) and, thus, a low resistivity by adjusting source gas (SiH4, H2, PH3) decomposition through MW-CVD with a showerhead controlling the decomposition of source gases by using two different gas injection paths. In this study, a selective growth mechanism was applied by using the deposition/etch cyclic process to achieve the bottom–up process in the L-shaped contact, using H2 plasma that simultaneously promoted the deposition and the etch processes. Additionally, the cyclic selective growth technique was set up by controlling the SiH4 flow rate. The bottom-up process resulted in a uniform doping distribution, as well as an excellent filling capacity without seam and center void formation. Thus, low contact resistivity and higher transistor on-current could be achieved at a high and uniform phosphorus (P)-concentration. Compared to the conventional thermal, this method is expected to be a strong candidate for the complicated deep and narrow contact process. View Full-Text
Keywords: microwave plasma; gap-fill process; selective Si growth microwave plasma; gap-fill process; selective Si growth
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MDPI and ACS Style

Kim, Y.; Lee, M.; Kim, Y.-J. Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD. Micromachines 2019, 10, 689.

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