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Journal: Materials, 2011
Volume: 4
Number: 2092
Article:
Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
Authors:
by
Agata Sakic, Tom L. M. Scholtes, Wiebe de Boer, Negin Golshani, Jaber Derakhshandeh and Lis K. Nanver
Link:
https://www.mdpi.com/1996-1944/4/12/2092
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