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Journal: MaterialsVolume: 4Number: 2092
Article: Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
  • Authors:
  • Agata Sakic*,
  • Tom L. M. Scholtes and
  • Wiebe de Boer
  • et al.
Link: https://www.mdpi.com/1996-1944/4/12/2092

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