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Journal: Materials, 2011
Volume: 4
Number: 2092

Article: Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
Authors: by Agata Sakic, Tom L. M. Scholtes, Wiebe de Boer, Negin Golshani, Jaber Derakhshandeh and Lis K. Nanver
Link: https://www.mdpi.com/1996-1944/4/12/2092

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