Sakic, A.; Scholtes, T.L.M.; Boer, W.d.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.
Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes. Materials 2011, 4, 2092-2107.
https://doi.org/10.3390/ma4122092
AMA Style
Sakic A, Scholtes TLM, Boer Wd, Golshani N, Derakhshandeh J, Nanver LK.
Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes. Materials. 2011; 4(12):2092-2107.
https://doi.org/10.3390/ma4122092
Chicago/Turabian Style
Sakic, Agata, Tom L. M. Scholtes, Wiebe de Boer, Negin Golshani, Jaber Derakhshandeh, and Lis K. Nanver.
2011. "Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes" Materials 4, no. 12: 2092-2107.
https://doi.org/10.3390/ma4122092
APA Style
Sakic, A., Scholtes, T. L. M., Boer, W. d., Golshani, N., Derakhshandeh, J., & Nanver, L. K.
(2011). Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes. Materials, 4(12), 2092-2107.
https://doi.org/10.3390/ma4122092