Bai, Z.; Ding, C.; Guo, Y.; Luo, M.; Zhou, Z.; Gu, L.; Zhang, Q.; Ma, H.
Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. Materials 2025, 18, 4531.
https://doi.org/10.3390/ma18194531
AMA Style
Bai Z, Ding C, Guo Y, Luo M, Zhou Z, Gu L, Zhang Q, Ma H.
Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. Materials. 2025; 18(19):4531.
https://doi.org/10.3390/ma18194531
Chicago/Turabian Style
Bai, Zhaopeng, Chengxi Ding, Yunduo Guo, Man Luo, Zimo Zhou, Lin Gu, Qingchun Zhang, and Hongping Ma.
2025. "Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition" Materials 18, no. 19: 4531.
https://doi.org/10.3390/ma18194531
APA Style
Bai, Z., Ding, C., Guo, Y., Luo, M., Zhou, Z., Gu, L., Zhang, Q., & Ma, H.
(2025). Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. Materials, 18(19), 4531.
https://doi.org/10.3390/ma18194531
