Kim, S.-K.; Kim, H.; Kim, H.S.; Hong, T.E.; Lee, Y.; Jung, E.Y.
Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis. Materials 2024, 17, 1005.
https://doi.org/10.3390/ma17051005
AMA Style
Kim S-K, Kim H, Kim HS, Hong TE, Lee Y, Jung EY.
Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis. Materials. 2024; 17(5):1005.
https://doi.org/10.3390/ma17051005
Chicago/Turabian Style
Kim, Seul-Ki, Hajun Kim, Hyun Sik Kim, Tae Eun Hong, Younki Lee, and Eun Young Jung.
2024. "Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis" Materials 17, no. 5: 1005.
https://doi.org/10.3390/ma17051005
APA Style
Kim, S.-K., Kim, H., Kim, H. S., Hong, T. E., Lee, Y., & Jung, E. Y.
(2024). Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis. Materials, 17(5), 1005.
https://doi.org/10.3390/ma17051005