Article Versions Notes

Tavani G, Barri C, Mafakheri E, Franzò G, Celebrano M, Castriotta M, Di Giancamillo M, Ferrari G, Picciariello F, Foletto G, et al. Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths. Materials. 2023; 16(6):2344. https://doi.org/10.3390/ma16062344

Tavani, Giulio, Chiara Barri, Erfan Mafakheri, Giorgia Franzò, Michele Celebrano, Michele Castriotta, Matteo Di Giancamillo, Giorgio Ferrari, Francesco Picciariello, Giulio Foletto, and et al. 2023. "Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths" Materials 16, no. 6: 2344. https://doi.org/10.3390/ma16062344

Tavani, G., Barri, C., Mafakheri, E., Franzò, G., Celebrano, M., Castriotta, M., Di Giancamillo, M., Ferrari, G., Picciariello, F., Foletto, G., Agnesi, C., Vallone, G., Villoresi, P., Sorianello, V., Rotta, D., Finazzi, M., Bollani, M., & Prati, E. (2023). Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths. Materials, 16(6), 2344. https://doi.org/10.3390/ma16062344