Bernat, R.; Knežević, T.; Radulović, V.; Snoj, L.; Makino, T.; Ohshima, T.; Capan, I.
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. Materials 2023, 16, 2202.
https://doi.org/10.3390/ma16062202
AMA Style
Bernat R, Knežević T, Radulović V, Snoj L, Makino T, Ohshima T, Capan I.
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. Materials. 2023; 16(6):2202.
https://doi.org/10.3390/ma16062202
Chicago/Turabian Style
Bernat, Robert, Tihomir Knežević, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, and Ivana Capan.
2023. "Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes" Materials 16, no. 6: 2202.
https://doi.org/10.3390/ma16062202
APA Style
Bernat, R., Knežević, T., Radulović, V., Snoj, L., Makino, T., Ohshima, T., & Capan, I.
(2023). Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes. Materials, 16(6), 2202.
https://doi.org/10.3390/ma16062202