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Jeong W, Kim S, Lee Y, Cho C, Seong I, You Y, Choi M, Lee J, Seol Y, You S. Contribution of Ion Energy and Flux on High-Aspect Ratio SiO₂ Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C₄F₈ Plasma: Individual Ion Energy and Flux Controlled. Materials. 2023; 16(10):3820. https://doi.org/10.3390/ma16103820

Jeong, Wonnyoung, Sijun Kim, Youngseok Lee, Chulhee Cho, Inho Seong, Yebin You, Minsu Choi, Jangjae Lee, Youbin Seol, and Shinjae You. 2023. "Contribution of Ion Energy and Flux on High-Aspect Ratio SiO₂ Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C₄F₈ Plasma: Individual Ion Energy and Flux Controlled" Materials 16, no. 10: 3820. https://doi.org/10.3390/ma16103820

Jeong, W., Kim, S., Lee, Y., Cho, C., Seong, I., You, Y., Choi, M., Lee, J., Seol, Y., & You, S. (2023). Contribution of Ion Energy and Flux on High-Aspect Ratio SiO₂ Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C₄F₈ Plasma: Individual Ion Energy and Flux Controlled. Materials, 16(10), 3820. https://doi.org/10.3390/ma16103820