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Journal: MaterialsVolume: 16Number: 3820
Article: Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled
- Authors:
- Wonnyoung Jeong1,
- Sijun Kim1,2,* and
- Youngseok Lee1,2
- et al.
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