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Journal: MaterialsVolume: 16Number: 3798
Article: Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
  • Authors:
  • Guangliang Hu1,
  • Yinchang Shen1 and
  • Lvkang Shen1
  • et al.
Link: https://www.mdpi.com/1996-1944/16/10/3798

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