N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
Abstract
:1. Introduction
2. Experiment
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Sample | NH3/sccm | TMAl/sccm |
---|---|---|
A | 12,000 | 0 |
B | 12,000 | 136 |
C | 12,000 | 204 |
Sample | Substrate | (002)/(102) (Arcsec) | Carrier Concentration (1017 cm−3) | Hall Mobility (cm2/Vs) |
---|---|---|---|---|
A | C | 330/1397 | 8.17 | 239 |
2M | 283/495 | 7.08 | 313 | |
4A | 383/460 | 8.72 | 279 | |
B | C | 303/416 | 24.2 | 166 |
2M | 237/337 | 33.8 | 174 | |
4A | 405/439 | 24.5 | 239 | |
C | C | 363/1014 | 5.02 | 252 |
2M | 379/500 | 5.95 | 325 | |
4A | 378/474 | 3.47 | 361 |
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Su, Z.; Li, Y.; Hu, X.; Song, Y.; Kong, R.; Deng, Z.; Ma, Z.; Du, C.; Wang, W.; Jia, H.; et al. N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation. Materials 2022, 15, 3005. https://doi.org/10.3390/ma15093005
Su Z, Li Y, Hu X, Song Y, Kong R, Deng Z, Ma Z, Du C, Wang W, Jia H, et al. N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation. Materials. 2022; 15(9):3005. https://doi.org/10.3390/ma15093005
Chicago/Turabian StyleSu, Zhaole, Yangfeng Li, Xiaotao Hu, Yimeng Song, Rui Kong, Zhen Deng, Ziguang Ma, Chunhua Du, Wenxin Wang, Haiqiang Jia, and et al. 2022. "N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation" Materials 15, no. 9: 3005. https://doi.org/10.3390/ma15093005
APA StyleSu, Z., Li, Y., Hu, X., Song, Y., Kong, R., Deng, Z., Ma, Z., Du, C., Wang, W., Jia, H., Chen, H., & Jiang, Y. (2022). N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation. Materials, 15(9), 3005. https://doi.org/10.3390/ma15093005