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Journal: Materials, 2022
Volume: 15
Number: 1118
1118
Article: Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
Authors: by Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski and Irmantas Kašalynas
Link: https://www.mdpi.com/1996-1944/15/3/1118

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