Jorudas, J.; Prystawko, P.; Šimukovič, A.; Aleksiejūnas, R.; Mickevičius, J.; Kryśko, M.; Michałowski, P.P.; Kašalynas, I.
Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials 2022, 15, 1118.
https://doi.org/10.3390/ma15031118
AMA Style
Jorudas J, Prystawko P, Šimukovič A, Aleksiejūnas R, Mickevičius J, Kryśko M, Michałowski PP, Kašalynas I.
Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials. 2022; 15(3):1118.
https://doi.org/10.3390/ma15031118
Chicago/Turabian Style
Jorudas, Justinas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, and Irmantas Kašalynas.
2022. "Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures" Materials 15, no. 3: 1118.
https://doi.org/10.3390/ma15031118
APA Style
Jorudas, J., Prystawko, P., Šimukovič, A., Aleksiejūnas, R., Mickevičius, J., Kryśko, M., Michałowski, P. P., & Kašalynas, I.
(2022). Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures. Materials, 15(3), 1118.
https://doi.org/10.3390/ma15031118