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Journal: Materials, 2021
Volume: 14
Number: 7535
7535
Article: Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO₂/WTe₂) Exhibiting Stable Resistive Switching
Authors: by Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran and Mohammed Ali Assiri
Link: https://www.mdpi.com/1996-1944/14/24/7535

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