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Journal: MaterialsVolume: 14Number: 7535
Article: Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
  • Authors:
  • Ghulam Dastgeer1,*,
  • Amir Muhammad Afzal2 and
  • Jamal Aziz3
  • et al.
Link: https://www.mdpi.com/1996-1944/14/24/7535

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