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10.3390/ma14216558
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Article

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

by
Chun Wang
1,
Yu-Chiao Chen
2,
Heng-Tung Hsu
3,
Yi-Fan Tsao
3,
Yueh-Chin Lin
1,
Chang-Fu Dee
4 and
Edward-Yi Chang
1,2,3,*
1
Department of Material Science Engineering, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
2
Department of Electrical Engineering, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
3
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
4
Institute of Microengineering and Nanoelectronics (IMEN) Level 4, Research Complex, University Kebangsaan Malaysia, Bangi 43600, Malaysia
*
Author to whom correspondence should be addressed.
Materials 2021, 14(21), 6558; https://doi.org/10.3390/ma14216558
Submission received: 2 October 2021 / Revised: 23 October 2021 / Accepted: 28 October 2021 / Published: 1 November 2021
(This article belongs to the Special Issue Advances in III-V Integration Materials and Devices)
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Abstract

In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon.
Keywords: GaN; HEMT; E-mode; wet surface treatment; power performance; millimeter-wave applications GaN; HEMT; E-mode; wet surface treatment; power performance; millimeter-wave applications

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MDPI and ACS Style

Wang, C.; Chen, Y.-C.; Hsu, H.-T.; Tsao, Y.-F.; Lin, Y.-C.; Dee, C.-F.; Chang, E.-Y. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials 2021, 14, 6558. https://doi.org/10.3390/ma14216558

AMA Style

Wang C, Chen Y-C, Hsu H-T, Tsao Y-F, Lin Y-C, Dee C-F, Chang E-Y. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials. 2021; 14(21):6558. https://doi.org/10.3390/ma14216558

Chicago/Turabian Style

Wang, Chun, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, and Edward-Yi Chang. 2021. "Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications" Materials 14, no. 21: 6558. https://doi.org/10.3390/ma14216558

APA Style

Wang, C., Chen, Y.-C., Hsu, H.-T., Tsao, Y.-F., Lin, Y.-C., Dee, C.-F., & Chang, E.-Y. (2021). Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials, 14(21), 6558. https://doi.org/10.3390/ma14216558

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