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Wang C, Chen Y-C, Hsu H-T, Tsao Y-F, Lin Y-C, Dee C-F, Chang E-Y. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials. 2021; 14(21):6558. https://doi.org/10.3390/ma14216558

Wang, Chun, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, and Edward-Yi Chang. 2021. "Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications" Materials 14, no. 21: 6558. https://doi.org/10.3390/ma14216558

Wang, C., Chen, Y.-C., Hsu, H.-T., Tsao, Y.-F., Lin, Y.-C., Dee, C.-F., & Chang, E.-Y. (2021). Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications. Materials, 14(21), 6558. https://doi.org/10.3390/ma14216558