Mukherjee, K.;                     De Santi, C.;                     Borga, M.;                     You, S.;                     Geens, K.;                     Bakeroot, B.;                     Decoutere, S.;                     Meneghesso, G.;                     Zanoni, E.;                     Meneghini, M.    
        Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials 2020, 13, 4740.
    https://doi.org/10.3390/ma13214740
    AMA Style
    
                                Mukherjee K,                                 De Santi C,                                 Borga M,                                 You S,                                 Geens K,                                 Bakeroot B,                                 Decoutere S,                                 Meneghesso G,                                 Zanoni E,                                 Meneghini M.        
                Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials. 2020; 13(21):4740.
        https://doi.org/10.3390/ma13214740
    
    Chicago/Turabian Style
    
                                Mukherjee, Kalparupa,                                 Carlo De Santi,                                 Matteo Borga,                                 Shuzhen You,                                 Karen Geens,                                 Benoit Bakeroot,                                 Stefaan Decoutere,                                 Gaudenzio Meneghesso,                                 Enrico Zanoni,                                 and Matteo Meneghini.        
                2020. "Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability" Materials 13, no. 21: 4740.
        https://doi.org/10.3390/ma13214740
    
    APA Style
    
                                Mukherjee, K.,                                 De Santi, C.,                                 Borga, M.,                                 You, S.,                                 Geens, K.,                                 Bakeroot, B.,                                 Decoutere, S.,                                 Meneghesso, G.,                                 Zanoni, E.,                                 & Meneghini, M.        
        
        (2020). Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials, 13(21), 4740.
        https://doi.org/10.3390/ma13214740