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Open AccessArticle

High Optical Response of Niobium-Doped WSe2-Layered Crystals

1
Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
2
Department of Electronic Engineering, National Changhua University of Education, Changhua 50074, Taiwan
*
Author to whom correspondence should be addressed.
Materials 2019, 12(7), 1161; https://doi.org/10.3390/ma12071161
Received: 24 January 2019 / Revised: 2 April 2019 / Accepted: 9 April 2019 / Published: 10 April 2019
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals. View Full-Text
Keywords: 2D chalcogenides; photoconductivity; photoresponse 2D chalcogenides; photoconductivity; photoresponse
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MDPI and ACS Style

Hsu, H.-P.; Lin, D.-Y.; Jheng, J.-J.; Lin, P.-C.; Ko, T.-S. High Optical Response of Niobium-Doped WSe2-Layered Crystals. Materials 2019, 12, 1161.

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