Cai, Y.; Zhu, C.; Jiu, L.; Gong, Y.; Yu, X.; Bai, J.; Esendag, V.; Wang, T.
Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials 2018, 11, 1968.
https://doi.org/10.3390/ma11101968
AMA Style
Cai Y, Zhu C, Jiu L, Gong Y, Yu X, Bai J, Esendag V, Wang T.
Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials. 2018; 11(10):1968.
https://doi.org/10.3390/ma11101968
Chicago/Turabian Style
Cai, Yuefei, Chenqi Zhu, Ling Jiu, Yipin Gong, Xiang Yu, Jie Bai, Volkan Esendag, and Tao Wang.
2018. "Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers" Materials 11, no. 10: 1968.
https://doi.org/10.3390/ma11101968
APA Style
Cai, Y., Zhu, C., Jiu, L., Gong, Y., Yu, X., Bai, J., Esendag, V., & Wang, T.
(2018). Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers. Materials, 11(10), 1968.
https://doi.org/10.3390/ma11101968