Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

INESC/MN, IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

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Department of Mathematical and Design Engineering, Gifu University, Gifu 501-1193, Japan

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Kyma Technologies, 8829 Midway West Rd, Raleigh, NC 27612, USA

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Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK

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Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland

Author to whom correspondence should be addressed.

Materials 2018, 11(10), 1800; https://doi.org/10.3390/ma11101800

Received: 6 July 2018 / Revised: 13 August 2018 / Accepted: 19 September 2018 / Published: 22 September 2018

(This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland)

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Abstract

Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu⁺ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing. View Full-Text

Keywords: gallium nitride; rare earth ions; europium; photoluminescence; photochromism; qubit

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MDPI and ACS Style

Edwards, P.R.; O’Donnell, K.P.; Singh, A.K.; Cameron, D.; Lorenz, K.; Yamaga, M.; Leach, J.H.; Kappers, M.J.; Boćkowski, M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials 2018, 11, 1800. https://doi.org/10.3390/ma11101800

AMA Style

Edwards PR, O’Donnell KP, Singh AK, Cameron D, Lorenz K, Yamaga M, Leach JH, Kappers MJ, Boćkowski M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials. 2018; 11(10):1800. https://doi.org/10.3390/ma11101800

Chicago/Turabian Style

Edwards, Paul R., Kevin P. O’Donnell, Akhilesh K. Singh, Douglas Cameron, Katharina Lorenz, Mitsuo Yamaga, Jacob H. Leach, Menno J. Kappers, and Michal Boćkowski. 2018. "Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results" Materials 11, no. 10: 1800. https://doi.org/10.3390/ma11101800

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Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

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