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Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

1
SUPA Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK
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Alternative Energy Materials, CSIR-National Physical Laboratory, New Delhi-110012, India
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INESC/MN, IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal
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Department of Mathematical and Design Engineering, Gifu University, Gifu 501-1193, Japan
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Kyma Technologies, 8829 Midway West Rd, Raleigh, NC 27612, USA
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Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK
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Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland
*
Author to whom correspondence should be addressed.
Materials 2018, 11(10), 1800; https://doi.org/10.3390/ma11101800
Received: 6 July 2018 / Revised: 13 August 2018 / Accepted: 19 September 2018 / Published: 22 September 2018
(This article belongs to the Special Issue III-Nitrides Semiconductor Research in the UK and Ireland)
Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing. View Full-Text
Keywords: gallium nitride; rare earth ions; europium; photoluminescence; photochromism; qubit gallium nitride; rare earth ions; europium; photoluminescence; photochromism; qubit
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MDPI and ACS Style

Edwards, P.R.; O’Donnell, K.P.; Singh, A.K.; Cameron, D.; Lorenz, K.; Yamaga, M.; Leach, J.H.; Kappers, M.J.; Boćkowski, M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials 2018, 11, 1800. https://doi.org/10.3390/ma11101800

AMA Style

Edwards PR, O’Donnell KP, Singh AK, Cameron D, Lorenz K, Yamaga M, Leach JH, Kappers MJ, Boćkowski M. Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results. Materials. 2018; 11(10):1800. https://doi.org/10.3390/ma11101800

Chicago/Turabian Style

Edwards, Paul R.; O’Donnell, Kevin P.; Singh, Akhilesh K.; Cameron, Douglas; Lorenz, Katharina; Yamaga, Mitsuo; Leach, Jacob H.; Kappers, Menno J.; Boćkowski, Michal. 2018. "Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results" Materials 11, no. 10: 1800. https://doi.org/10.3390/ma11101800

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