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Journal: Materials, 2017
Article: 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
Authors: by Ke-Jing Lee, Yu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang and Yeong-Her Wang
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