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Journal: MaterialsVolume: 10Number: 1408
Article: 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
- Authors:
- Ke-Jing Lee,
- Yu-Chi Chang and
- Cheng-Jung Lee
- et al.
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