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Journal: Materials, 2017
Volume: 10
Number: 1408

Article: 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
Authors: by , , , and
Link: https://www.mdpi.com/1996-1944/10/12/1408

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