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Open AccessArticle

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Materials 2017, 10(1), 51;
Received: 21 November 2016 / Revised: 16 December 2016 / Accepted: 4 January 2017 / Published: 10 January 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance. View Full-Text
Keywords: thin film transistors; inkjet printing; a-IGZO; silver ink thin film transistors; inkjet printing; a-IGZO; silver ink
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MDPI and ACS Style

Ning, H.; Chen, J.; Fang, Z.; Tao, R.; Cai, W.; Yao, R.; Hu, S.; Zhu, Z.; Zhou, Y.; Yang, C.; Peng, J. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors. Materials 2017, 10, 51.

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