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Materials 2017, 10(2), 126;

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Received: 27 September 2016 / Revised: 28 December 2016 / Accepted: 24 January 2017 / Published: 4 February 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
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We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination. View Full-Text
Keywords: magnesium zinc oxide; ultraviolet; thin-film transistor; phototransistor magnesium zinc oxide; ultraviolet; thin-film transistor; phototransistor

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Li, J.-Y.; Chang, S.-P.; Hsu, M.-H.; Chang, S.-J. High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering. Materials 2017, 10, 126.

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