Research on Key Technologies for Microwave Wireless Power Transfer Receivers
Abstract
1. Introduction
2. Current State of MWPT Receiver Technology Research
2.1. Typical MWPT Systems
2.2. Research Status at Home and Abroad
3. Key Technologies for the Receiving End
3.1. Key Technologies for Efficient Rectifier Circuits
3.1.1. Rectifier Diodes
3.1.2. Matching Circuit
3.2. Key Technologies for Power Synthesis
- Implementing load impedance matching design for rectifier circuits resolves the issue of fluctuating conversion efficiency due to load impedance variations.
- Implementing MPPT design for the rectifier circuit can resolve the issue of conversion efficiency being affected by input power.
- Implementing electrical isolation design for rectifying antenna arrays can address the issue of limited series-parallel configurations.
4. Research and Development Trend
- 1.
- Miniaturized Rectifier Monolithic Microwave Integrated Circuit (MMIC) Design
- 2.
- High-Efficiency Broadband Rectification
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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| Rectifier Topologies | Number of Diodes | Rectification Method | Output Voltage Characteristics | Efficiency | Power Capacity | Application |
|---|---|---|---|---|---|---|
| Single in series | 1 | half-wave | Low, big fluctuation | Low | Small | Micro low-power devices |
| Single parallel | 1 | half-wave | Low, big fluctuation | Extremely low | Small | Load requiring reverse voltage protection |
| Voltage doubler rectifier circuit | 2 | Full wave (voltage-doubling) | High, significant fluctuation | medium | medium | High-voltage and low-current equipment |
| Bridge rectifier circuit | 4 | Full wave | Medium to high, small fluctuation | High | Big | Medium to high power, stable power supply scenario |
| Parameters | Si | GaAs | 4H-SiC | GaN |
|---|---|---|---|---|
| Band gap (eV) | 1.1 | 1.42 | 3.26 | 3.39 |
| Intrinsic carrier concentration (cm−3) | 1.15 × 1010 | 1.5 × 106 | 8 × 10−9 | 1.9 × 10−10 |
| Relative permittivity | 11.8 | 13.1 | 10 | 9 |
| Electron mobility (cm2/(V·s)) | 1350 | 8500 | 700 | 2000 |
| Electron saturation velocity (107 cm/s) | 1.0 | 1.0 | 2.0 | 2.5 |
| Breakdown field Strength (MV/cm) | 0.3 | 0.4 | 3.0 | 3.3 |
| Coefficient of thermal conductivity (W/(cm·K)) | 1.5 | 0.43 | 3.3–4.5 | 1.3 |
| Refs. | Freq (GHz) | Diode | Peak Efficiency | Pin (dBm) | High-Efficiency Power Range | Year |
|---|---|---|---|---|---|---|
| [24] | 5.8 | GaN SBD | 77.4% | 39 | 70% (31–40 dBm) | 2025 |
| [25] | 5.8 | GaN SBD | 75.5% | 34 | 60% (26–37 dBm) | 2020 |
| [26] | 2.45 | Si SBD | 82.7% | 25 | 70% (16–26 dBm) | 2020 |
| [27] | 5.8 | GaN SBD | 70% | 33 | 60% (27–33 dBm) | 2021 |
| [28] | 5.8 | GaN SBD | 74% | 33 | 60% (28.8–36 dBm) | 2021 |
| [29] | 5.8 | Si SBD | 77% | 22.3 | Not Available | 2022 |
| [30] | 5.8 | GaN SBD | 72.4% | 33.4 | 60% (25–35 dBm) | 2023 |
| [31] | 2.4 | Si SBD | 82.8% | 15 | 70% (4–13 dBm) | 2023 |
| [32] | 5.8 | GaN SBD | 78.9% | 31 | 70% (25–35 dBm) | 2024 |
| [33] | 5.8 | GaN SBD | 81.9% | 29 | 70% (19–33 dBm) | 2024 |
| [34] | 5.8 | GaN SBD (10 nm) | 80.2 | 25.4 | 60% (17–28.5 dBm) | 2025 |
| 5.8 | GaN SBD (20 nm) | 74.4 | 23 | 60% (17–28.5 dBm) | 2025 |
| Matching Type | Feature | Application | Advantage | Disadvantage |
|---|---|---|---|---|
| Passive fixed | Simple structure, low cost, static | Fixed load, short distance, static MWPT system | Low loss and high reliability | Unable to adapt to changes in load/environment |
| Active tunable | Dynamic adjustment, fast response | Dynamic load, medium distance MWPT system | Strong adaptability and good real-time performance | High insertion loss and limited power capacity |
| Intelligent adaptive | Automatic, high precision, closed loop | Long distance, multi node, dynamic MWPT system | Wide adaptability and stable efficiency | Complex structure, high cost, and complex algorithm |
| Matching Type | Energy Loss | Causes of Loss |
|---|---|---|
| Passive fixed | Low | Ohmic and dielectric losses of passive components, conductor and dielectric losses of transmission lines |
| Active tunable | Large | Insertion loss of variable reactance devices and additional energy consumption of active control circuits |
| Intelligent adaptive | Medium | Adjustable network insertion loss, detection module energy consumption, controller and algorithm computation energy consumption |
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Ruan, M.; Wang, X.; Xu, W.; Huang, L.; Wu, K.; Wang, M.; Yin, Y.; Chen, J. Research on Key Technologies for Microwave Wireless Power Transfer Receivers. Energies 2026, 19, 438. https://doi.org/10.3390/en19020438
Ruan M, Wang X, Xu W, Huang L, Wu K, Wang M, Yin Y, Chen J. Research on Key Technologies for Microwave Wireless Power Transfer Receivers. Energies. 2026; 19(2):438. https://doi.org/10.3390/en19020438
Chicago/Turabian StyleRuan, Man, Xudong Wang, Wanli Xu, Long Huang, Kai Wu, Mengyi Wang, Yujuan Yin, and Jinmao Chen. 2026. "Research on Key Technologies for Microwave Wireless Power Transfer Receivers" Energies 19, no. 2: 438. https://doi.org/10.3390/en19020438
APA StyleRuan, M., Wang, X., Xu, W., Huang, L., Wu, K., Wang, M., Yin, Y., & Chen, J. (2026). Research on Key Technologies for Microwave Wireless Power Transfer Receivers. Energies, 19(2), 438. https://doi.org/10.3390/en19020438
