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Journal: Energies, 2024
Volume: 17
Number: 4362
Article:
Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices
Authors:
by
Dominik Nehmer, Tim Ringelmann and Mark-M. Bakran
Link:
https://www.mdpi.com/1996-1073/17/17/4362
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