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Journal: Sensors, 2024
Volume: 24
Number: 7130

Article: Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
Authors: by Taeyeong Kim, Garam Kim, Moon-Kyu Cho, John D. Cressler, Jaeduk Han and Ickhyun Song
Link: https://www.mdpi.com/1424-8220/24/22/7130

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