Kim, T.; Kim, G.; Cho, M.-K.; Cressler, J.D.; Han, J.; Song, I.
Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors. Sensors 2024, 24, 7130.
https://doi.org/10.3390/s24227130
AMA Style
Kim T, Kim G, Cho M-K, Cressler JD, Han J, Song I.
Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors. Sensors. 2024; 24(22):7130.
https://doi.org/10.3390/s24227130
Chicago/Turabian Style
Kim, Taeyeong, Garam Kim, Moon-Kyu Cho, John D. Cressler, Jaeduk Han, and Ickhyun Song.
2024. "Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors" Sensors 24, no. 22: 7130.
https://doi.org/10.3390/s24227130
APA Style
Kim, T., Kim, G., Cho, M.-K., Cressler, J. D., Han, J., & Song, I.
(2024). Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors. Sensors, 24(22), 7130.
https://doi.org/10.3390/s24227130