Article Versions Notes

Liang C, Cao Z, Hao J, Zhao S, Yu Y, Dong Y, Liu H, Huang C, Gao C, Zhou Y, et al. Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review. Sensors. 2024; 24(18):6150. https://doi.org/10.3390/s24186150

Liang, Chengyao, Zhongyu Cao, Jiongyue Hao, Shili Zhao, Yuanting Yu, Yingchun Dong, Hangyu Liu, Chun Huang, Chao Gao, Yong Zhou, and et al. 2024. "Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review" Sensors 24, no. 18: 6150. https://doi.org/10.3390/s24186150

Liang, C., Cao, Z., Hao, J., Zhao, S., Yu, Y., Dong, Y., Liu, H., Huang, C., Gao, C., Zhou, Y., & He, Y. (2024). Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review. Sensors, 24(18), 6150. https://doi.org/10.3390/s24186150