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Open AccessArticle

Sensitivity Improvement to Active Piezoresistive AFM Probes Using Focused Ion Beam Processing

Faculty of Microsystems, Electronics and Photonics, Wroclaw University of Science and Technology, 50-372 Wroclaw, Poland
Department of Micro- and Nanoelectronic Systems (MNES), Institute of Micro and Nanoelectronics, Ilmenau University of Technology, Gustav-Kirchhoff-Str.1, 98693 Ilmenau, Germany
Authors to whom correspondence should be addressed.
Sensors 2019, 19(20), 4429;
Received: 31 July 2019 / Revised: 24 September 2019 / Accepted: 7 October 2019 / Published: 12 October 2019
(This article belongs to the Special Issue Nano and MEMS Sensors)
This paper presents a comprehensive modeling and experimental verification of active piezoresistive atomic force microscopy (AFM) cantilevers, which are the technology enabling high-resolution and high-speed surface measurements. The mechanical structure of the cantilevers integrating Wheatstone piezoresistive was modified with the use of focused ion beam (FIB) technology in order to increase the deflection sensitivity with minimal influence on structure stiffness and its resonance frequency. The FIB procedure was conducted based on the finite element modeling (FEM) methods. In order to monitor the increase in deflection sensitivity, the active piezoresistive cantilever was deflected using an actuator integrated within, which ensures reliable and precise assessment of the sensor properties. The proposed procedure led to a 2.5 increase in the deflection sensitivity, which was compared with the results of the calibration routine and analytical calculations.
Keywords: MEMS; silicon cantilever; FIB modifications; FEM MEMS; silicon cantilever; FIB modifications; FEM
MDPI and ACS Style

Kunicki, P.; Angelov, T.; Ivanov, T.; Gotszalk, T.; Rangelow, I. Sensitivity Improvement to Active Piezoresistive AFM Probes Using Focused Ion Beam Processing. Sensors 2019, 19, 4429.

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